The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe∕ZnTe quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2841711
Reference22 articles.
1. GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors
2. Role of defects in transport through a quantum dot single electron transistor
3. Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers
4. Optical properties of InP∕GaInP quantum-dot laser structures
5. 1.31 μm InGaAs quantum dot light-emitting diodes grown directly in a GaAs matrix by metalorganic chemical-vapor deposition
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1. Influence of CdTe thickness on structural and optical properties of CdTe/ZnTe quantum dots on Si substrates;Journal of the Korean Physical Society;2018-01
2. Structure Parameters and Electric Field Effects on Exciton Binding Energies of CdTe/ZnTe Quantum Rings;Japanese Journal of Applied Physics;2013-03-01
3. Structural effects on the electronic properties of vertically-coupled CdTe/ZnTe quantum-dot molecules;Journal of the Korean Physical Society;2012-12
4. Binding Energy of D0 and D− Impurity Centers in CdTe/ZnTe Spherical Quantum Dot;Journal of Nanoscience and Nanotechnology;2012-11-01
5. Electric field effect on the nonlinear and linear intersubband absorption spectra in CdTe/ZnTe spherical quantum dot;Journal of Nanophotonics;2012-09-25
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