Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules-Reference-Cited by-同舟云学术

Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules

Published:2015-03-07 Issue:9 Volume:117 Page:094306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Barettin Daniele¹,Auf der Maur Matthias¹,De Angelis Roberta²,Prosposito Paolo²,Casalboni Mauro²,Pecchia Alessandro³

Affiliation:

1. Department of Electronic Engineering, University of Rome “Tor Vergata,” Via del Politecnico 1, 00133, Rome, Italy

2. Department of Industrial Engineering, University of Rome Tor Vergata, Via del Politecnico 1 00133 Rome, Italy and INSTM, Unitá di ricerca dell'Universitá di Roma “Tor Vergata,” Via della Ricerca Scientifica 1, 00133, Rome, Italy

3. CNR-ISMN, via Salaria Km. 29.300, 00017 Monterotondo, Rome, Italy

Funder

Fondazione Cariplo (Cariplo Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914041

Reference53 articles.

1. Red-Emitting Semiconductor Quantum Dot Lasers

2. 1.3 μm room-temperature GaAs-based quantum-dot laser

3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

4. Red light-emitting diodes based on InP∕GaP quantum dots

5. Colour-tunable light-emitting diodes based on InP/GaP nanostructures

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