Localization at interfaces of imperfect AlSb/InAs heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.7834/fulltext
Reference34 articles.
1. The origin of room temperature luminescence in Si–Ge quantum wells: The case for an interface localization model
2. Electronic structure of imperfect Si/Ge heterostructures
3. Interface-induced localization in AlSb/InAs heterostructures
4. Anisotropy and growth-sequence dependence of atomic-scale interface structure in InAs/Ga1−xInxSb superlattices
5. Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy
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1. Intrinsic interface states in InAs–AlSb heterostructures;Journal of Physics: Condensed Matter;2016-01-06
2. Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
3. Electrochemical formation of thin films of binary III-V compounds;Handbook of Thin Films;2002
4. Scattering from interface islands: enhanced lifetimes through non-linear effect of cation defects;Physica E: Low-dimensional Systems and Nanostructures;2001-11
5. Optical properties of imperfect strained-layerInAs/Ga1−xInxSb/AlSbsuperlattices with infrared applications;Physical Review B;2000-03-15
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