Optical properties of imperfect strained-layerInAs/Ga1−xInxSb/AlSbsuperlattices with infrared applications
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.8375/fulltext
Reference35 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials
3. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
4. Optimization of absorption in InAs/InxGa1-xSb superlattices for long-wavelength infrared detection
5. Far‐infrared photoresponse of the InAs/GaInSb superlattice
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