Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells-Reference-Cited by-同舟云学术

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

Published:2022-07-28 Issue:3 Volume:106 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Aristegui R.^ORCID,Chiaruttini F.,Jouault B.^ORCID,Lefebvre P.^ORCID,Brimont C.,Guillet T.^ORCID,Vladimirova M.^ORCID,Chenot S.,Cordier Y.^ORCID,Damilano B.^ORCID

Funder

Agence Nationale de la Recherche

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.106.035429/fulltext

Reference63 articles.

1. Effect of electric fields on excitons in a coupled double-quantum-well structure

2. Electric-field effects on exciton lifetimes in symmetric coupled GaAs/Al0.3Ga0.7As double quantum wells

3. Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures

4. Interlayer excitons in bilayer MoS2 with strong oscillator strength up to room temperature

5. Room-temperature electrical control of exciton flux in a van der Waals heterostructure

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2. Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion;Journal of Applied Physics;2024-03-01

3. Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films;Physical Review B;2023-09-15

4. Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells;Physical Review B;2022-07-28