Formation and structure of vacancy defects in silicon: Combined Metropolis Monte Carlo, tight-binding molecular dynamics, and density functional theory calculations
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.245209/fulltext
Reference24 articles.
1. Spin Resonance in Electron Irradiated Silicon
2. Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
3. Direct observation of voids in the vacancy excess region of ion bombarded silicon
4. Magic numbers for vacancy aggregation in crystalline Si
5. Diffusion and interactions of point defects in silicon: molecular dynamics simulations
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2. Interplay between Composition, Electronic Structure, Disorder, and Doping due to Dual Sublattice Mixing in Nonequilibrium Synthesis of ZnSnN 2 :O;Advanced Materials;2019-01-22
3. Void formation in melt-grown silicon studied by molecular dynamics simulations: From grown-in faulted dislocation loops to vacancy clusters;Applied Physics Letters;2011-08-22
4. Atomistic structural description of the Si(001)/a-SiO2interface: The influence of different Keating-like potential parameters;Journal of Applied Physics;2011-06
5. Effects of vacancy defects on thermal conductivity in crystalline silicon: A nonequilibrium molecular dynamics study;Physical Review B;2011-03-14
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