Atomistic structural description of the Si(001)/a-SiO2interface: The influence of different Keating-like potential parameters
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3581110
Reference75 articles.
1. Oxygen Migration, Agglomeration, and Trapping: Key Factors for the Morphology of theSi−SiO2Interface
2. General Relationship for the Thermal Oxidation of Silicon
3. CONTINUOUS-RANDOM-NETWORK MODELS FOR THE Si-SiO2 INTERFACE
4. An experimental comparison of measurement techniques to extract Si-SiO2 interface trap density
5. Undetectability of the point defect as an interface state in thermal
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