Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions
Author:
Funder
Canadian Meteorological and Oceanographic Society
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.184406/fulltext
Reference34 articles.
1. Basic principles of STT-MRAM cell operation in memory arrays
2. Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory
3. Back-hopping after spin torque transfer induced magnetization switching in magnetic tunneling junction cells
4. High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions
5. Backhopping effect in magnetic tunnel junctions: Comparison between theory and experiment
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