Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory-Reference-Cited by-同舟云学术

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Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory

Published:2019 Issue: Volume:10 Page:1-4
ISSN:1949-307X
Container-title:IEEE Magnetics Letters
language:
Short-container-title:IEEE Magn. Lett.

Author:

Hu Guohan^ORCID,Nowak Janusz J.^ORCID,Gottwald Matthias G.,Sun Jonathan Z.^ORCID,Houssameddine Dimitri,Bak Junghoon,Brown Stephen L.,Hashemi Pouya^ORCID,He Qing^ORCID,Kim Juhyun,Kothandaraman Chandrasekharan,Lauer Gen,Lee Hyun Koo,Suwannasiri Thitima,Trouilloud Philip L.,Worledge Daniel C.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5165412/8566206/08762202.pdf?arnumber=8762202

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2. A Dynamic Testing Scheme for Resistive-Based Computation-In-Memory Architectures;2024 29th Asia and South Pacific Design Automation Conference (ASP-DAC);2024-01-22

3. High spin current density in gate-tunable spin-valves based on graphene nanoribbons;Scientific Reports;2023-06-07

4. Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors;Advanced Electronic Materials;2023-02-14

5. A perspective on electrical generation of spin current for magnetic random access memories;Applied Physics Letters;2022-04-18

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