Multiband k·p model and fitting scheme for ab initio based electronic structure parameters for wurtzite GaAs
Author:
Funder
Academy of Finland
Deutsche Forschungsgemeinschaft
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.235147/fulltext
Reference42 articles.
1. Theory of the electronic structure of GaN/AlN hexagonal quantum dots
2. Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1−xN quantum dots
3. Interrelation of structural and electronic properties inInxGa1−xN∕GaNquantum dots using an eight-bandk∙pmodel
4. Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
5. In(Ga)As/GaAs quantum dots grown on a (111) surface as ideal sources of entangled photon pairs
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1. Multiband k·p theory for hexagonal germanium;Physical Review B;2024-05-02
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3. Empirical tight-binding parameters for wurtzite group III–V(non-nitride) and IV materials;AIP Advances;2023-02-01
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