Spin exchange between a quantum well and the donor layer inSi/Si1−xCx
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.12568/fulltext
Reference16 articles.
1. Near-Band-Edge Photoluminescence from PseudomorphicSi1−yCy/SiQuantum Well Structures
2. Si1-yCy-Legierungsschichten - ein neuartiges Halbleitermaterial
3. Synthesis of Si1−yCyalloys by molecular beam epitaxy
4. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
5. Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structures
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