Energy-dependent relaxation time in quaternary amorphous oxide semiconductors probed by gated Hall effect measurements-Reference-Cited by-同舟云学术

Energy-dependent relaxation time in quaternary amorphous oxide semiconductors probed by gated Hall effect measurements

Published:2017-01-18 Issue:4 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Socratous Josephine,Watanabe Shun,Banger Kulbinder K.,Warwick Christopher N.,Branquinho Rita,Barquinha Pedro,Martins Rodrigo,Fortunato Elvira,Sirringhaus Henning

Funder

Seventh Framework Programme

Engineering and Physical Sciences Research Council

A.G. Leventis Foundation

Japan Society for the Promotion of Science

Japan Science and Technology Corporation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.045208/fulltext

Reference21 articles.

1. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

3. An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

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