Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy-Reference-Cited by-同舟云学术

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

Published:2017-06-05 Issue:23 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Berg Morgann,Keyshar Kunttal,Bilgin Ismail,Liu Fangze,Yamaguchi Hisato,Vajtai Robert,Chan Calvin,Gupta Gautam,Kar Swastik,Ajayan Pulickel,Ohta Taisuke,Mohite Aditya D.

Funder

U.S. Department of Energy

National Science Foundation

Laboratory Directed Research and Development

Los Alamos National Laboratory

Sandia National Laboratories

National Nuclear Security Administration

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.235406/fulltext

Reference77 articles.

1. Van der Waals heterostructures

2. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

3. Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

4. The valley Hall effect in MoS 2 transistors

5. Integrated Circuits and Logic Operations Based on Single-Layer MoS2

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