Resistive Switching in CsPbBr<sub>3</sub> (0D)/MoS<sub>2</sub> (2D) Heterojunction System: Trap-Controlled Space Charge Limited Transport Mechanism-Reference-Cited by-同舟云学术

Resistive Switching in CsPbBr₃ (0D)/MoS₂ (2D) Heterojunction System: Trap-Controlled Space Charge Limited Transport Mechanism

Published:2023-03-15 Issue:3 Volume:5 Page:1536-1545
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Deshmukh Akshaya Pisal¹,Patil Kalyanee¹,Ogale Satishchandra²³^ORCID,Bhave Tejashree¹^ORCID

Affiliation:

1. Department of Applied Physics, Defence Institute of Advanced Technology, Deemed University, Girinagar, Pune, 411 025, India

2. Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research, Pune, Dr. Homi Bhabha Road, Pune, 411008 India

3. Research Institute for Sustainable Energy (RISE), TCG Centres for Research and Education in Science and Technology (TCG-CREST), Salt Lake, Kolkata, 700091 India

Funder

Council of Scientific and Industrial Research, India

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01590

Reference51 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Resistance switching memories are memristors