Theoretical study of isolated dangling bonds, dangling bond wires, and dangling bond clusters on aH:Si(001)−(2×1)surface
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.045308/fulltext
Reference41 articles.
1. Surface States and Rectification at a Metal Semi-Conductor Contact
2. Observation of a Band of Silicon Surface States Containing One Electron Per Surface Atom
3. Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy
4. Scanning tunneling microscopy of Si(001)
5. Electronic Structure of Localized Si Dangling-Bond Defects by Tunneling Spectroscopy
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