Pressure-induced insulator-to-metal transition in few-layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>FePS</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> at 1.5 GPa-Reference-Cited by-同舟云学术

Pressure-induced insulator-to-metal transition in few-layer FePS3 at 1.5 GPa

Published:2024-06-14 Issue:23 Volume:109 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mallick Bidyut¹,Palit Mainak²,Jana Rajkumar²,Das Soumik²,Ghosh Anudeepa²,Sunil Janaky³^ORCID,Maity Sujan²,Das Bikash²,Kundu Tanima²,Narayana Chandrabhas³^ORCID,Datta Ayan²^ORCID,Datta Subhadeep²^ORCID

Affiliation:

1. Galgotias College of Engineering and Technology

2. Indian Association for the Cultivation of Science

3. Jawaharlal Nehru Centre for Advanced Scientific Research

Funder

Indian Association for the Cultivation of Science

Department of Science and Technology, Ministry of Science and Technology, India

Council of Scientific and Industrial Research, India

Science and Engineering Research Board

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.109.235417/fulltext

Reference56 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

4. Tunable Phonon Polaritons in Atomically Thin van der Waals Crystals of Boron Nitride

5. Heterogeneous Spin States in Ultrathin Nanosheets Induce Subtle Lattice Distortion To Trigger Efficient Hydrogen Evolution

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1. Pressure-induced insulator-to-metal transition in few-layer FePS3 at 1.5 GPa;Physical Review B;2024-06-14