Charge doping effect on sliding ferroelectricity by first-principles calculations-Reference-Cited by-同舟云学术

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Charge doping effect on sliding ferroelectricity by first-principles calculations

Published:2024-06-20 Issue:23 Volume:109 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wang Pei¹^ORCID,Hu Ting¹^ORCID,Kan Erjun¹^ORCID

Affiliation:

1. Nanjing University of Science and Technology

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

Collaborative Innovation Center of Advanced Microstructures

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.109.235426/fulltext

Reference44 articles.

1. Ferroelectric tunnel junctions for information storage and processing

2. Ferroelectric field effect transistors: Progress and perspective

3. A review of flexible perovskite oxide ferroelectric films and their application

4. Van der Waals negative capacitance transistors

5. Two-Dimensional van der Waals Ferroelectrics: Scientific and Technological Opportunities

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