Author:
Miao Mao-Sheng,Lambrecht Walter R. L.
Funder
National Science Foundation
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
6 articles.
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1. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
2. Photoluminescence wavelength from stacking fault with complicated structure in 4H-SiC epitaxial layer;Japanese Journal of Applied Physics;2022-09-27
3. Designing silicon carbide heterostructures for quantum information science: challenges and opportunities;Materials for Quantum Technology;2022-05-23
4. Modeling of Bipolar Degradations in 4H-SiC Power MOSFET Devices by a 3C-SiC Inclusive Layer Consideration in the Drift Region;IEEE Transactions on Power Electronics;2022-03
5. Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport;Journal of Crystal Growth;2018-09