Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport-Reference-Cited by-同舟云学术

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Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport

Published:2018-09 Issue: Volume:498 Page:224-229
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Suo H.,Eto K.,Ise T.,Tokuda Y.,Osawa H.,Tsuchida H.,Kato T.,Okumura H.

Funder

Council for Science, Technology and Innovation

NEDO

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference40 articles.

1. Material science and device physics in SiC technology for high-voltage power devices

2. Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping

3. Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth

4. Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent

5. Impurity incorporation kinetics during modified-Lely growth of SiC

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

2. Threading dislocation increase in the initial stage of growth of nitrogen and boron co-doped 4H-SiC by physical vapor transport;Journal of Crystal Growth;2022-11

3. Silicon-Carbide Nanocrystals from Nonthermal Plasma: Surface Chemistry and Quantum Confinement;The Journal of Physical Chemistry C;2022-07-22

4. Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate;Japanese Journal of Applied Physics;2019-01-08

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