Impurity incorporation kinetics during modified-Lely growth of SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367234
Reference10 articles.
1. Single crystal growth of SiC substrate material for blue light emitting diodes
2. SiC boule growth by sublimation vapor transport
3. Site‐competition epitaxy for superior silicon carbide electronics
4. Nitrogen Incorporation Kinetics during the Sublimation Growth of 6H and 4H SiC
5. Growth of 6H and 4H silicon carbide single crystals by the modified Lely process utilizing a dual‐seed crystal method
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3. Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals;Journal of Crystal Growth;2022-11
4. Enhanced nitrogen incorporation in the 〈112̄0〉 directions on the (0001̄) facet of 4H-SiC crystals;Japanese Journal of Applied Physics;2022-08-15
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