Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots-Reference-Cited by-同舟云学术

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Published:2010-12-14 Issue:23 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Taboada A. G.,Sánchez A. M.,Beltrán A. M.,Bozkurt M.,Alonso-Álvarez D.,Alén B.,Rivera A.,Ripalda J. M.,Llorens J. M.,Martín-Sánchez J.,González Y.,Ulloa J. M.,García J. M.,Molina S. I.,Koenraad P. M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.235316/fulltext

Reference44 articles.

1. 1.3 μm room-temperature GaAs-based quantum-dot laser

2. Laser devices with stacked layers of InGaAs/GaAs quantum rings

3. Optical investigation of type II GaSb∕GaAs self-assembled quantum dots

4. High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

5. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

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