Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors-Reference-Cited by-同舟云学术

Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors

Published:2015-07-06 Issue:1 Volume:107 Page:011101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Guzmán Álvaro¹,Yamamoto Kenji¹,Ulloa J. M.¹,Llorens J. M.²^ORCID,Hierro Adrian¹

Affiliation:

1. Instituto de Sistemas Optoelectrónicos y Microtecnología y Dept. Ingeniería Electrónica, Universidad Politécnica de Madrid, ETSI de Telecomunicación, Avda. Complutense 30, 28040 Madrid, Spain

2. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain

Funder

Ministerio de EconomÃa y Competitividad

Ministerio de Economía y Competitividad (Ministry of Economy and Competitiveness)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926364

Reference17 articles.

1. Third-generation infrared photodetector arrays

2. Quantum‐well infrared photodetectors

3. Quantum dot infrared photodetectors

4. Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer

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1. Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate;Applied Surface Science;2018-06

2. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process;Nanotechnology;2017-09-18

3. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells;Solar Energy Materials and Solar Cells;2017-01