Interaction parameters and a quenched-disorder phase diagram for (GaAs)1−xGe2xalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.1889/fulltext
Reference33 articles.
1. Phase Diagram for the Pseudo-binary System Germanium and Gallium Arsenide
2. A review of recent research on the growth and physical properties of single crystal metastable elemental and alloy semiconductors
3. Zinc-blende—diamond order-disorder transition in metastable crystalline(GaAs)1−xGe2xalloys
4. Properties of (Ge2)x(GaAs)1−xalloys grown by molecular beam epitaxy
5. Direct evidence for an order/disorder phase transition atx≂0.3 in single‐crystal metastable (GaSb)(1−x)(Ge2)xalloys: High‐resolution x‐ray diffraction measurements
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1. Amphoteric behavior of Ge in GaAs: an LDA analysis;Modelling and Simulation in Materials Science and Engineering;2011-03-03
2. On the Chemical Origin of the Gap Bowing in (GaAs)1−x Ge2x Alloys: A Combined DFT–QSGW Study;Nanoscale Research Letters;2010-01-07
3. Cu–Au TYPE STRUCTURES IN THE STAGGERED QUADRUPOLAR REGION OF THE fcc BLUME–EMERY–GRIFFITHS MODEL;International Journal of Modern Physics C;2009-10
4. Obtaining Ising-like expansions for binary alloys from first principles;Modelling and Simulation in Materials Science and Engineering;2002-10-03
5. Effect of sample size on simulations and measurements of the phase transition in(GaAs)1−xGe2xand related alloys;Physical Review B;2002-08-06
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