Direct evidence for an order/disorder phase transition atx≂0.3 in single‐crystal metastable (GaSb)(1−x)(Ge2)xalloys: High‐resolution x‐ray diffraction measurements-Reference-Cited by-同舟云学术

Direct evidence for an order/disorder phase transition atx≂0.3 in single‐crystal metastable (GaSb)(1−x)(Ge2)xalloys: High‐resolution x‐ray diffraction measurements

Published:1986-03 Issue:5 Volume:59 Page:1482-1487
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shah S. I.,Kramer B.,Barnett S. A.,Greene J. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.336503

Reference18 articles.

1. A review of recent research on the growth and physical properties of single crystal metastable elemental and alloy semiconductors

2. Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys

3. Growth of single‐crystal metastable semiconducting (GaSb)1−xGexfilms

4. Growth and thermal stability of single crystal metastable semiconducting (GaSb),1−xGex films

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