Properties of (Ge2)x(GaAs)1−xalloys grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95569
Reference10 articles.
1. Preparation of nonequilibrium solid solutions of (GaAs)1−xSix
2. Growth of single‐crystal metastable semiconducting (GaSb)1−xGexfilms
3. Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys
4. Summary Abstract: Ion mixing during film deposition: Growth of metastable semiconducting and metallic alloys
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