Summary Abstract: Ion mixing during film deposition: Growth of metastable semiconducting and metallic alloys
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.571468
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Processing and characterization of chalcopyrite semiconductors for photovoltaic applications;Journal of Vacuum Science & Technology A;2024-01-16
2. Deposition of metastable binary alloy thin films using sequential ion beams from a single ion source;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1986-08
3. Properties of (Ge2)x(GaAs)1−xalloys grown by molecular beam epitaxy;Applied Physics Letters;1985-03
4. Observation of phase separation in (Ge2)x(GaAs)1−x alloys grown by molecular beam epitaxy;Materials Letters;1984-02
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