Photoluminescence processes inSimGensuperlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.15625/fulltext
Reference21 articles.
1. Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge
2. Photoluminescence in short-period Si/Ge strained-layer superlattices
3. Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)nsuperlattices
4. Optical absorption spectroscopy of Si-Ge alloys and superlattices
5. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
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1. Ambient erbium luminescence in silicon and silicon-germanium films;Emerging Materials Research;2012-02
2. Optical Properties of Excitons in Structures of Reduced Dimensionality;Semiconductor Optics;2012
3. Optical gain in short period Si/Ge superlattices on [001]-SiGe substrates;Journal of Applied Physics;2011-10-15
4. Miniband-related 1.4–1.8μm Luminescence of Ge/Si Quantum Dot Superlattices;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008
5. Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices;Nanoscale Research Letters;2006-08-01
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