Coupling of ultrathin InAs layers as a tool for band-offset determination
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.59.10315/fulltext
Reference39 articles.
1. Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1
2. Valence band engineering in strained-layer structures
3. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy
4. Optical investigation of the electronic structure of single ultrathin InAs layers grown pseudomorphically on (100) and (311)AGaAs substrates
5. Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells
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