Electron conduction in two-dimensionalGaAs1−yNychannels-Reference-Cited by-同舟云学术

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Electron conduction in two-dimensionalGaAs1−yNychannels

Published:2004-04-15 Issue:15 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fowler D.,Makarovsky O.,Patanè A.,Eaves L.,Geelhaar L.,Riechert H.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.153305/fulltext

Reference15 articles.

1. Theory of Substitutional Deep Traps in Covalent Semiconductors

2. Theory of electronic structure evolution in GaAsN and GaPN alloys

3. Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells

4. Band Anticrossing in GaInNAs Alloys

5. Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys

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1. Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations;Journal of Alloys and Compounds;2016-12

2. N incorporation and associated localized vibrational modes in GaSb;Physical Review B;2014-01-22

3. InAs-based dilute nitride materials and devices for the mid-infrared spectral range;Quantum Sensing and Nanophotonic Devices X;2013-02-04

4. Development of dilute nitride materials for mid-infrared diode lasers;Semiconductor Science and Technology;2012-08-22

5. Using High Magnetic Fields to Study the Electronic Properties of Semiconductor Materials and Nanostructures;Semiconductor Research;2012

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