Computational design ofSi∕SiO2interfaces: Stress and strain on the atomic scale-Reference-Cited by-同舟云学术

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Computational design ofSi∕SiO2interfaces: Stress and strain on the atomic scale

Published:2006-04-12 Issue:16 Volume:73 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Korkin Anatoli,Greer J. C.,Bersuker Gennadi,Karasiev Valentin V.,Bartlett Rodney J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.165312/fulltext

Reference59 articles.

1. An electron diffraction study of the structure of silicon (100)

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