Strain relaxation in (0001) AlN/GaN heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.245307/fulltext
Reference65 articles.
1. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
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3. Room Temperature Lasing at Blue Wavelengths in Gallium Nitride Microcavities
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