Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.045201/fulltext
Reference34 articles.
1. Hydrogen Passivation of γ-Induced Point Defects in Silicon
2. Hydrogen-related deep levels in proton-bombarded silicon
3. Transformation of deep-level spectrum of irradiated silicon due to hydrogenation under wet chemical etching
4. Hydrogen interaction with implantation induced point defects in p-type silicon
5. Light-illumination-induced transformation of electron traps in hydrogen-implanted n-type silicon
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