Hydrogen Passivation of γ-Induced Point Defects in Silicon-Reference-Cited by-同舟云学术

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Hydrogen Passivation of γ-Induced Point Defects in Silicon

Published:1982-07-16 Issue:1 Volume:72 Page:K73-K75
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Pearton S. J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter

2. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter

3. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

4. Inst. Phys. C;Kimerling,1977

5. Inst. Phys. C;Kimerling,1979

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1. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers;Semiconductor physics, quantum electronics and optoelectronics;2008-07-30

2. Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon;Physical Review B;2004-01-09

3. Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si;Critical Reviews in Solid State and Materials Sciences;2004-01

4. New hydrogen-related radiation-induced deep-level center in boron-doped silicon;Physica B: Condensed Matter;2001-12

5. Observation and theory of theV−O−H2complex in silicon;Physical Review B;2000-05-15

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