High-resolution (GaAs)1−x(Ge2)xx-ray photoelectron valence-band spectra: Implications for proposed electronic and structural models
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1372/fulltext
Reference23 articles.
1. Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys
2. Domain structure in epitaxial metastable zinc-blende (GaAs)1−x(Ge2)x(001) alloys
3. Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part I
4. Direct evidence for an order/disorder phase transition atx≂0.3 in single‐crystal metastable (GaSb)(1−x)(Ge2)xalloys: High‐resolution x‐ray diffraction measurements
5. Nonunique structure of metastable (GaSb)1−x(Ge2)xalloys
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3. Structural and compositional properties of epitaxial (GaAs) 1-x (Ge 2 ) x thin films grown by rf magnetron sputtering;SPIE Proceedings;2000-12-15
4. Observation of zinc blend to diamond transition in metastable (GaAs) 1-x (Ge 2 ) x alloys by Raman scattering;SPIE Proceedings;2000-12-15
5. Structural study of metastable (GaAs)1−X(Ge2)X thin films grown by RF magnetron sputtering;Journal of Crystal Growth;1999-03
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