Structural study of metastable (GaAs)1−X(Ge2)X thin films grown by RF magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Summary Abstract: Crystal growth, atomic ordering, and physical properties of epitaxial metastable semiconductors
2. High-resolution (GaAs)1−x(Ge2)xx-ray photoelectron valence-band spectra: Implications for proposed electronic and structural models
3. Interaction parameters and a quenched-disorder phase diagram for (GaAs)1−xGe2xalloys
4. Growth and optical properties of single-crystal metastable (GaAs)1−xGex alloys
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1. Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures;Journal of Materials Chemistry C;2018
2. Influence of growth direction on order-disorder transition in(GaAs)1−x(Si2)xalloys;Physical Review B;2001-12-13
3. Raman scattering study of (GaAs)1−x(Si2)x alloys epitaxially grown on GaAs;Journal of Applied Physics;2001-11-15
4. Growth of strained-layer GaAs/Ge superlattices by magnetron sputtering: Optical and structural characterization;Journal of Applied Physics;2001-03-15
5. Physical properties of(GaAs)1−x(Ge2)x: Influence of growth direction;Physical Review B;2001-03-02
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