Physical properties of(GaAs)1−x(Ge2)x: Influence of growth direction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.115328/fulltext
Reference23 articles.
1. Optical Absorption in Single-Crystal Metastable(GaAs)1−x(Ge2)xAlloys: Evidence for a Zinc-Blende-Diamond Order-Disorder Transition
2. Direct evidence for an order/disorder phase transition atx≂0.3 in single‐crystal metastable (GaSb)(1−x)(Ge2)xalloys: High‐resolution x‐ray diffraction measurements
3. Growth of single‐crystal metastable (GaAs)1−x(Si2)xalloys on GaAs and (GaAs)1−x(Si2)x/GaAs strained‐layer superlattices
4. Structural study of metastable (GaAs)1−X(Ge2)X thin films grown by RF magnetron sputtering
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