Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.3522/fulltext
Reference26 articles.
1. Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon
2. Neutralization of acceptors in silicon by atomic hydrogen
3. Field drift of the hydrogen‐related, acceptor‐neutralizing defect in diodes from hydrogenated silicon
4. Hydrogenation and annealing kinetics of group‐III acceptors in oxidized silicon
5. Hydrogen passivation of point defects in silicon
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Vadim Evgenievich Lashkarev and optoelectronics;Optoelektronìka ta napìvprovìdnikova tehnìka;2023-12-21
2. RF Plasma Monolayer Doping of Si Nanowires;2019 IEEE 9th International Conference Nanomaterials: Applications & Properties (NAP);2019-09
3. Enhanced recrystallization and dopant activation of P+ion-implanted super-thin Ge layers by RF hydrogen plasma treatment;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09
4. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers;Semiconductor physics, quantum electronics and optoelectronics;2008-07-30
5. The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures;Materials Science and Engineering: B;2005-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3