The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures-Reference-Cited by-同舟云学术

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The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

Published:2005-12 Issue: Volume:124-125 Page:458-461
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Nazarov A.N.,Vovk J.N.,Osiyuk I.N.,Tkachenko A.S.,Tyagulskii I.P.,Lysenko V.S.,Gebel T.,Rebohle L.,Skorupa W.,Yankov R.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. The effect of RF annealing upon electron-beam irradiated MIS structures

2. RF plasma annealing of implanted MIS structures

3. RF plasma modification of heavily destroyed ion implanted subsurface silicon layers

4. Relaxation of amorphous structure of implanted Si under RF plasma treatment: Raman and EPR study

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers;Semiconductor physics, quantum electronics and optoelectronics;2008-07-30

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