Time-resolved measurements of the radiative recombination in GaAs/AlxGa1−xAs heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.4771/fulltext
Reference14 articles.
1. Two-dimensional electron gas at a semiconductor-semiconductor interface
2. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
3. Fractional Quantization of the Hall Effect
4. New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface
5. Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions
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