Improvement of drain current of AlGaN/GaN-HEMT through the modification of negative differential conductance (NDC), current collapse, self-heating and optimization of double hetero structure-Reference-Cited by-同舟云学术

Improvement of drain current of AlGaN/GaN-HEMT through the modification of negative differential conductance (NDC), current collapse, self-heating and optimization of double hetero structure

Published:2016-09 Issue: Volume:97 Page:606-616
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Basumatary Bikramjit,Maity Santanu,Muchahary Deboraj

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

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5. High-temperature performance of AlGaN/GaN HFET's on SiC substrates;Gaska;IEEE Trans. Electron Devices,1997

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