Author:
Arivazhagan L.,Jarndal Anwar,Nirmal D.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Jarndal, A., Markos, A.Z., Kompa, G.: Improved modeling of GaN HEMT on Si substrate for design of RF power amplifiers. IEEE Trans. Microw. Theory Tech. 59(3), 644–651 (2011)
2. Jarndal, A., Bassal, A.: A broadband hybrid GaN cascode low noise amplifier for WiMax applications. J. RF Microw. Comput. Aided Eng, Int (2018). https://doi.org/10.1002/mmce.21456
3. Jarndal, A., Hussein, A., Crupi, G., Caddemi, A.: Reliable noise modeling of GaN HEMTs for designing low-noise amplifiers. Int. J. Numer. Model. 33(3), e2585 (2019)
4. Liu, J., Guo, Y., Zhang, J., Yao, J., Huang, X., Huang, C., Huang, Z., Yang, K.: Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on equivalent potential method. Superlattices Microstruct. 138, 106327 (2020)
5. Bagnall, Kevin R., Wang, Evelyn N.: Theory of thermal time constants in GaN high-electron-mobility transistors. IEEE Trans. Compon. Packag. Manuf. Technol. 8(4), 606–620 (2018)
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