A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00647-3.pdf
Reference50 articles.
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3. Joshi V, Soni A, Tiwari SP, Senior Member IEEE, Shrivastava M, Senior Member IEEE (2016) A comprehensive computational modeling approach for AlGaN/GaN HEMTs. IEEETrans Nanotechnol 15(6):947–955
4. Susai Lawrence Selvaraj, Takaaki Suzue, and Takashi Egawa (2009) Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers. IEEE Electron Device Lett 30 (6)
5. Lu B (2010) Student Member, IEEE, and Tomás Palacios, “High Breakdown (> 1500 V) AlGaN/GaN HEMTs by Substrate-Transfer Technology,”. IEEE Electron Device Lett 31(9):951–957
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