Monte Carlo study of Si(111) homoepitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.14623/fulltext
Reference33 articles.
1. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
2. Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)
3. Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM
4. Structural analysis of Si(111) surfaces during homoepitaxial growth
5. The initial process of molecular beam epitaxial growth of Si on Si(111)7 × 7: a model for the destruction of the 7 × 7 reconstruction
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1. Molecular dynamics simulations of the solid phase epitaxy of Si: Growth mechanism and orientation effects;Journal of Applied Physics;2009-09-15
2. Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates;Thin Solid Films;2008-06
3. Atomic-scale homoepitaxial growth simulations of reconstructed III–V surfaces;Progress in Surface Science;2001-02
4. Absence of a step-edge barrier on a polar semiconductor surface with reconstruction;Physical Review B;2000-07-15
5. Relation between surface reconstructions and RHEED intensity oscillations;Physical Review B;1998-09-15
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