Roughening and ripple instabilities on ion-bombarded Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.17647/fulltext
Reference35 articles.
1. The mechanisms of etch pit and ripple structure formation on ion bombarded Si and other amorphous solids
2. Roughening instability and evolution of the Ge(001) surface during ion sputtering
3. Ripple production induced by oblique incidence ion bombardment of Si
4. Dynamic Scaling of Ion-Sputtered Surfaces
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