First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">CoSi</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> (111)/Si(111) interfaces-Reference-Cited by-同舟云学术

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First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi2 (111)/Si(111) interfaces

Published:2024-07-10 Issue:3 Volume:110 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Nangoi J. K.¹^ORCID,Palmstrøm C. J.¹¹,Van de Walle C. G.¹^ORCID

Affiliation:

1. University of California, Santa Barbara

Funder

Army Research Office

National Science Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.110.035302/fulltext

Reference82 articles.

1. Ionicity and the theory of Schottky barriers

2. The metal-semiconductor interface: Si (111) and zincblende (110) junctions

3. Epitaxy in the Presence of Very Large Misfit: High Resolution TEM Study of Al/Si, Ag/Si, Al/CaF2/Si and Ag/CaF2/Si

4. Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α

5. Schottky barrier inhomogeneity caused by grain boundaries in epitaxial Al film formed on Si(111)

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1. First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi2 (111)/Si(111) interfaces;Physical Review B;2024-07-10

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