Epitaxy in the Presence of Very Large Misfit: High Resolution TEM Study of Al/Si, Ag/Si, Al/CaF2/Si and Ag/CaF2/Si-Reference-Cited by-同舟云学术

Epitaxy in the Presence of Very Large Misfit: High Resolution TEM Study of Al/Si, Ag/Si, Al/CaF2/Si and Ag/CaF2/Si

Published:1987 Issue: Volume:94 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

LeGoues F. K,Liehr M.,Renier M.

Abstract

ABSTRACTWe summarize high resolution transmission electron microscopy studies of interfaces with 33% misfit. We explain the existence of epitaxial interfaces for this systems by a geometrical argument similar to the 0-lattice models used to study high angle grain boundaries. Differences between systems very similar in structures are explained. We use the thus found epitaxial interfaces to build multilayered structures of the type metal/insulator/semiconductor.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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