P-associated defects in the high-κinsulatorsHfO2andZrO2revealed by electron spin resonance
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.125341/fulltext
Reference33 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Interfaces and defects of high-K oxides on silicon
3. Dopant penetration studies through Hf silicate
4. Diffusion Coefficient of As and P in HfO2
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