Shape transitions and island nucleation for Si/Ge molecular beam epitaxy on stripe-patterned Si (001) substrate
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.125329/fulltext
Reference71 articles.
1. Growth of SiGe quantum wires and dots on patterned Si substrates
2. Ordered nucleation of Ge islands along high index planes on Si
3. Lithographic positioning of self-assembled Ge islands on Si(001)
4. Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
5. Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface
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