Ordered nucleation of Ge islands along high index planes on Si
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Growth mechanism and clustering phenomena: The Ge-on-Si system
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
4. Formation of Heterogeneous Thickness Modulations During Epitaxial Growth of LPCVD-Si1−xGex/Si Quantum Well Structures
5. Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy
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