Electronic driving force for stacking fault expansion in4H‐SiC
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.155312/fulltext
Reference39 articles.
1. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
2. Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
3. Thermal and doping dependence of 4H-SiC polytype transformation
4. Structural instability of 4H–SiC polytype induced by n-type doping
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3. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective;Japanese Journal of Applied Physics;2024-01-15
4. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation;Scientific Reports;2022-08-15
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